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Wear Leveling Technique using Bit Array and Bit Set Threshold for Flash Memory
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 Title & Authors
Wear Leveling Technique using Bit Array and Bit Set Threshold for Flash Memory
Kim, Seon Hwan; Kwak, Jong Wook; Park, Chang-Hyeon;
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 Abstract
Flash memory has advantages in that it is fast access speed, low-power, and low-price. Therefore, they are widely used in electronics industry sectors. However, the flash memory has weak points, which are the limited number of erase operations and non-in-place update problem. To overcome the limited number of erase operations, many wear leveling techniques are studied. They use many tables storing information such as erase count of blocks, hot and cold block indicators, reference count of pages, and so on. These tables occupy some space of main memory for the wear leveling techniques. Accordingly, they are not appropriate for low-power devices limited main memory. In order to resolve it, a wear leveling technique using bit array and Bit Set Threshold (BST) for flash memory. The proposing technique reduces the used space of main memory using a bit array table, which saves the history of block erase operations. To enhance accuracy of cold block information, we use BST, which is calculated by using the number of invalid pages of the blocks in a one-to-many mode, where one bit is related to many blocks. The performance results illustrate that the proposed wear leveling technique improve life time of flash memory to about 6%, compared with previous wear leveling techniques using a bit array table in our experiment.
 Keywords
Flash Memory;Wear Leveling;Storage Device;Block Erase Table;Bit Set Threshold;Bit Array;
 Language
Korean
 Cited by
 References
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