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Design and Strength Evaluation of an Anodically Bonded Pressurized Cavity Array for Wafer-Level MEMS Packaging
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 Title & Authors
Design and Strength Evaluation of an Anodically Bonded Pressurized Cavity Array for Wafer-Level MEMS Packaging
Gang, Tae-Gu; Jo, Yeong-Ho;
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 Abstract
We present the design and strength evaluation of an anodically bonded pressurized cavity array, based on the energy release rate measured from the anodically bonded plates of two dissimilar materials. From a theoretical analysis, a simple fracture mechanics model of the pressurized cavity array has been developed. The energy release rate (ERR) of the bonded cavity with an infinite bonding length has been derived in terms of cavity pressure, cavity size, bonding length, plate size and material properties. The ERR with a finite bonding length has been evaluated from the finite element analysis performed for varying cavity and plate sizes. It is found that, for an inter-cavity bonding length greater than the half of the cavity length, the bonding strength of cavity array approaches to that of the infinite plate. For a shorter bonding length, however, the bonding strength of the cavity array is monotonically decreased with the ratio of the bonding length to the cavity length. The critical ERR of 6.21J/㎡ has been measured from anodically bonded silicon-glass plates. A set of critical pressure curves has been generated for varying cavity array sizes, and a design method of the pressurized cavity array has been developed for the failure-free wafer-level packaging of MEMS devices.
 Keywords
Anodic Bonding;Wafer-Level Packaging;Pressurized Cavity Packaging;MEMS;
 Language
Korean
 Cited by
1.
다구찌 방법에 의한 유리-실리콘 양극접합 계면의 파괴인성치 측정 및 양극접합공정 조건에 따른 접합강도 분석,강태구;조영호;

대한기계학회논문집A, 2002. vol.26. 6, pp.1187-1193 crossref(new window)
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