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Analysis of Radiative Heat Transfer and Mass Transfer During Multi-Wafer Low Pressure Chemical Vapor Deposition Process
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 Title & Authors
Analysis of Radiative Heat Transfer and Mass Transfer During Multi-Wafer Low Pressure Chemical Vapor Deposition Process
Park, Kyoung-Soon; Choi, Man-Soo; Cho, Hyoung-Joo;
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 Abstract
An analysis of heat and mass transfer has been carried out for multi-wafer Low Pressure Chemical Vapor Deposition (LPCVD). Surface radiation analysis considering specular radiation among wafers, heaters, quartz tube and side plates of the reactor has been done to determine temperature distributions of 150 wafers in two dimensions. Velocity, temperature and concentration fields of chemical gases flowing in a reactor with multi-wafers have been then determined, which determines Si deposition growth rate and uniformity on wafers using two different surface reaction models. The calculation results of temperatures and Si deposition have been compared and found to be in a reasonable agreement with the previous experiments.
 Keywords
LPCVD;Heat and Mass Transfer;Specular Surface;Diffuse Surface;
 Language
Korean
 Cited by
 References
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