A Study of Impurity Deposition on ITO Substrate using RF Magnetron Sputtering

Title & Authors
A Study of Impurity Deposition on ITO Substrate using RF Magnetron Sputtering
Park, Jung-Cheul; Chu, Soon-Nam;

Abstract
In this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of $\small{300^{\circ}C}$ and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of $\small{250^{\circ}C}$.
Keywords
ITO substrate;RF power;Transmittance;Temperature;
Language
Korean
Cited by
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