JOURNAL BROWSE
Search
Advanced SearchSearch Tips
Photo-response of Polysilicon-based Photodetector depending on Deuterium Incorporation Method
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Photo-response of Polysilicon-based Photodetector depending on Deuterium Incorporation Method
Lee, Jae-Sung;
  PDF(new window)
 Abstract
The photo-response characteristics of polysilicon based metal-semiconductor-metal (MSM) photodetector structure, depending on deuterium treatment method, was analyzed by means of the dark-current and the light-current measurements. Al/Ti bilayer was used as a Schottky metal. Our purpose is to incorporate the deuterium atoms into the absorption layer of undoped polysilicon, effectively, for the defect passivation. We have introduced two deuterium treatment methods, a furnace annealing and an ion implantation. In deuterium furnace annealing, deuterium bond was distributed around polysilicon surface where the light current flows. As for the ion implantation, even thought it was a convenient method to locate the deuterium inside the polysilicon film, it creates some damages around polysilicon surface. This deteriorated the photo-response in our photodetector structure.
 Keywords
Metal-semiconductor-metal(MSM) photodetector;Polysilicon;Photo-response;Deuterium;Passivation;
 Language
Korean
 Cited by
 References
1.
R. A. Soref and J. Larenzo, "All-silicon active and passive guided-wave components for ${\lambda}$ = 1.3 and 1.6 ${\mu}m$", IEEE J. Quantum Electron, vol. 22, pp. 873-879, 1986. crossref(new window)

2.
R.A. Soref, and B. B. Bennett, "Kramers-kronig analysis of Electro-optical switching in silicon", Proc. SPIE Integr. Opt. Circuit Eng. 704, pp. 32-37, 1986.

3.
E. Budianu, M. Purica, E. Manea, and M. Kusko, "Poly-silicon thin layer photodetector structures", International Semiconductor Conference, vol.1. 2003.

4.
R. P. MacDonald, N. G. Tarr, B. A. Syrett, S. A. Boothroyd, and J. Chrostowski, "MSM photodetector fabricated on polycrystalline silicon", IEEE Photon. Technol. Lett., vol.11, pp. 108-110, 1999. crossref(new window)

5.
T. Y. Hsiang, S. Alexandrou, and C. C. Wang, M. Y. Liu, and S. Y. Chou, "Picosecond silicon metal-semiconductor-metal photodiode", Proc. SPIE, 2022, 76, 1993.

6.
J. W. Lyding, K. Hess, and I. C. Kizilyalli, "Reduction of hot carrier degradation in MOS transistors by deuterium processing," Appl. Phys. Lett., vol.68, pp.2526-2528, 1996. crossref(new window)

7.
R. W. Lee, R. C. Frank, and D. E. Swets, "Diffusion of hydrogen and deuterium in fused quartz," J. Chem. Phys., vol. 36, pp. 1026-1071, 1962.

8.
R. L. Van Meirhaeghe, W. H. Laflere, and F. Cardon, "Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts," J. App;. Phys., 76 (1) pp. 403-406, 1994. crossref(new window)

9.
H. C. Card and W. Hwang, "On the transport theory of Schottky barriers to polycrystalline silicon thin fims," IEEE Trans. Electron Devices, vol. ED-27, no. 4, pp. 700-705, 1980.

10.
J. S. Lee, D. G. Lee, S. W. Do, and Y. H. Lee, "Study for the Reliability of Nano-Scale MOS Devices that Experienced Implantation of Hydrogen or Deuterium at the Back-End of the Process Line", J. Korean Phys. Soc., vol. 50, no.5, pp.1561-1565, 2007. crossref(new window)

11.
J.-S. Lee, S.-W. Do, and Y.-H. Lee, "Deuterium ion implantation for the suppression of defect generation in gate oxide of MOSFET", J. IEIE, vol. 45, no. 7, pp.23-31, 2008.