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SLC Buffer Performance Improvement using Page Overwriting Method in TLC NAND Flash-based Storage Devices
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 Title & Authors
SLC Buffer Performance Improvement using Page Overwriting Method in TLC NAND Flash-based Storage Devices
Won, Samkyu; Chung, Eui-Young;
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 Abstract
In multi-level-cell based storage devices, TLC NAND has been employed solid state drive due to cost effectiveness. Since TLC has slow performance and low endurance compared with MLC, TLC based storage has adopted SLC buffer scheme to improve performance. To improve SLC buffer scheme, this paper proposes page overwriting method in SLC block. This method provides data updates without erase operation within a limited number. When SLC buffer area is filled up, FTL should execute copying valid pages and erasing it. The proposed method reduces erase counts by 50% or more compared with previous SLC buffer scheme. Simulation results show that the proposed SLC buffer overwrite method achieves 2 times write performance improvement.
 Keywords
Flash Memory;TLC NAND;SLC Buffer;Page overwrite;FTL;
 Language
Korean
 Cited by
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한국정보기술학회논문지, 2016. vol.14. 9, pp.1-9 crossref(new window)
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