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Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor)
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 Title & Authors
Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor)
Park, Kun-Sik; Cho, Doohyung; Won, Jong-Il; Kwak, Changsub;
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 Abstract
Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current () and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage () of on/off-FET. In this paper, we have demonstrated the effect of adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area
 Keywords
MOS Controlled Thyristor;MCT;Thyristor;Power device;Pulsed power system;
 Language
Korean
 Cited by
 References
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