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4H-SiC Schottky Barrier Diode Using Double-Field-Plate Technique
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 Title & Authors
4H-SiC Schottky Barrier Diode Using Double-Field-Plate Technique
Kim, Taewan; Sim, Seulgi; Cho, Dooyoung; Kim, Kwangsoo;
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Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.
4H-SiC;Schottky barrier diode;Edge Terminations;Breakdown Voltage;On-resistance;
 Cited by
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