Determination of the Depletion Depth of the Deep Depletion Charge-Coupled Devices

Title & Authors
Determination of the Depletion Depth of the Deep Depletion Charge-Coupled Devices
Kim Man-Ho;

Abstract
A 3-D numerical simulation of a buried-channel CCD (Charge Coupled Device) with a deep depletion has been performed to investigate its electrical and physical behaviors. Results are presented for a deep depletion CCD (EEV CCD12; JET-X CCD) fabricated on a high-resistivity $\small{(1.5k\Omega-cm)\;65{\mu}m}$ thick epi-layer, on a $\small{550{\mu}m}$ thick p+ substrate, which is optimized for X-ray detection. Accurate predictions of the Potential minimum and barrier height of a CCD Pixel as a function of mobile electrons are found to give good charge transfer. The depletion depth approximation as a function of gate and substrate bias voltage provided average errors of less than 6%, compared with the results estimated from X-ray detection efficiency measurements. The result obtained from the transient simulation of signal charge movement is also presented based on 3-Dimensional analysis.
Keywords
charge coupled device;charge transfer;deep depletion;depletion depth;3-D numerical simulation;
Language
English
Cited by
1.
Electrical and Optical Propeties of a UV-Sensitive CCD Imager,;;

Journal of Electrical Engineering and Technology, 2007. vol.2. 4, pp.518-524
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