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Surface Photovoltage in Electron Beam Irradiation Semi-insulating GaAs
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 Title & Authors
Surface Photovoltage in Electron Beam Irradiation Semi-insulating GaAs
Yu, Jae-In; Lim, Jin-Hwan; Yu, Jae-Yong; Kim, Ki-Hong;
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 Abstract
Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.
 Keywords
Surfacephotovoltage;GaAs;E-Beam;
 Language
English
 Cited by
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Transactions on Electrical and Electronic Materials, 2009. vol.10. 6, pp.217-221 crossref(new window)
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