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Electrical Properties of (Bi,Y)4Ti3O12 Thin Films Grown by RF Sputtering Method
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 Title & Authors
Electrical Properties of (Bi,Y)4Ti3O12 Thin Films Grown by RF Sputtering Method
Nam, Sung-Pill; Lee, Sung-Gap; Bae, Seon-Gi; Lee, Young-Hie;
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 Abstract
Yttrium(Y)-substituted bismuth titanate [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the substrates. The structural properties and electrical properties of yttrium-substituted thin films were analyzed. The remanent polarization of films increased with increasing Y-content. The films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The films exhibited fatigue-free behavior up to read/write switching cycles at a frequency of 1MHz.
 Keywords
BYT;Fatigue property;RF sputtering;Thin film;
 Language
English
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 References
1.
H.M. Duiker, P.D. Cuchiaro, L.D. McMillian, 'Fatigue and switching in ferroelectric memories: Theory and experiment', J. Appl. Phys. 68 (1992) 5783

2.
C. A Paz de Araudjo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott, 'Fatigue-Free Ferroelectric Capacitors with Platinum-Electrodes', Nature, 374 (1995) 627

3.
Wei Li, Jun Gu, Chunhua song, Dong Su, and Jinsong Zhu, 'B-site doping effect on ferroelectric property of bismuth titanate ceramic', J. Appl. Phys. 98, 114104 (2005)

4.
B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J, W. Jo, 'Lanthanum-substituted bismuth titanate for use in non volatile memories', Nature 401 (1999) 682

5.
K.T. Kim, C.I. Kim, D.H. Kang, I.W. Shin, 'Characterization of BLT thin films using MgO buffer for MFIS-FET', Thin Solid Films 422 (2002) 230

6.
T. Kojima, T. Sakai, T. Watanabe, H. Funakubo, K. Saito, M. Osada, 'Large remanent polarization of $(Bi,Nd)_4Ti_3O_{12}$ epitaxial thin films grown by metaorganic chemical vapor deposition', Appl. Phys. Lett. 80 (2002) 2746 crossref(new window)

7.
Y. N. Oh, S.G. Yoon, Appl. 'Structural and ferroelectric properties of $(Bi,Ce)_4Ti_3O_{12}$ thin films grown by pulsed laser deposition for ferroelectric random access memories', Surface Science 227 (2004) 187 crossref(new window)

8.
Hiroshi Funakubo, Katsuyuki Ishikawa, Takayuki Watanabe, Masatoshi Mitsuya, Norimasa Nukaga, 'Preparation of bismuth layer-structured erroelectric thin films by MOCVD and their characterization', Adv. Mater. Opt. electronics, 10, (2000) 193

9.
Alan Snedden, Philip Lightfoot, Tim Dinges, and M. Saiful Islam, 'Defect and dopant properties of the Aurivillius phase $Bi_4Ti_3O_{12}$', J. Solid State Chem. 177 (2004) 3660 crossref(new window)