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Electrical and Optical Propeties of a UV-Sensitive CCD Imager
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 Title & Authors
Electrical and Optical Propeties of a UV-Sensitive CCD Imager
Kim, Man-Ho; Choi, Jae-Ha;
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This paper describes several improved characterizations of the EPIC CCD, which now has modified electrode and channel structures. From a 3-D numerical simulation of the device, its channel doping and potential distributions are then observed for the optimization of the charge transfer. A wavelength-dependence on the device structure is observed in terms of the reflectivity of the incident radiation. The optical properties of ultra-low energy levels, when using an open-electrode structure, are then considered to improve their quantum efficiency.
Charge transfer efficiency;Open-electrode CCD;Qantum efficiency;UV-sensitive CCD;
 Cited by
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M.H. Kim, Determination of the depletion depth of the deep depletion charge-coupled devices, Journal of Electrical Engineering & Technology, vol. 1. No. 2, p. 233, (2006) crossref(new window)

M.H. Kim, 3-dimensional numerical analysis of deep depletion buried channel MOSFETs and CCDs, Journal of Electrical Engineering & Technology, vol . 1. No. 3, p. 396, (2006) crossref(new window)