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An Analytical Expression for Current Gain of an IGBT
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 Title & Authors
An Analytical Expression for Current Gain of an IGBT
Moon, Jin-Woo; Chung, Sang-Koo;
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 Abstract
A simple analytical expression for a current gain of IGBT is derived in terms of the device parameters as well as a gate length dependent parameter, which allows for the determination of the current components of the device as a function of its gate length. The analytical results are compared with those from simulation results. A good agreement is found.
 Keywords
IGBT;Current Gain;Analytical Expression;
 Language
English
 Cited by
1.
Transmission Line Analysis of Accumulation Layer in IEGT,;;

Journal of Electrical Engineering and Technology, 2011. vol.6. 6, pp.824-828 crossref(new window)
1.
Transmission Line Analysis of Accumulation Layer in IEGT, Journal of Electrical Engineering and Technology, 2011, 6, 6, 824  crossref(new windwow)
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