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Photoluminescence of Hexagonal Boron Nitride (h-BN) Film
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 Title & Authors
Photoluminescence of Hexagonal Boron Nitride (h-BN) Film
Jin, Moon-Seog; Kim, Nam-Oh;
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Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed -ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.
BN (boron-nitride);Energy gap;Photoluminescence;Recombinations;
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