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Photoluminescence of Hexagonal Boron Nitride (h-BN) Film
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 Title & Authors
Photoluminescence of Hexagonal Boron Nitride (h-BN) Film
Jin, Moon-Seog; Kim, Nam-Oh;
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 Abstract
Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed -ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.
 Keywords
BN (boron-nitride);Energy gap;Photoluminescence;Recombinations;
 Language
English
 Cited by
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Electronic and optical properties of h-BN nanosheet: A first principles calculation, Diamond and Related Materials, 2015, 58, 190  crossref(new windwow)
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Cheap, Gram-Scale Fabrication of BN Nanosheets via Substitution Reaction of Graphite Powders and Their Use for Mechanical Reinforcement of Polymers, Scientific Reports, 2014, 4  crossref(new windwow)
3.
Blue–green luminescent carbon nanodots produced in a silica matrix, Carbon, 2015, 91, 234  crossref(new windwow)
4.
Synthesis micro-scale boron nitride nanotubes at low substrate temperature, AIP Advances, 2016, 6, 7, 075110  crossref(new windwow)
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Large scale synthesis of single-crystal and polycrystalline boron nitride nanosheets, Journal of Materials Science, 2013, 48, 6, 2543  crossref(new windwow)
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