Publisher : The Korean Institute of Electrical Engineers
DOI : 10.5370/JEET.2010.5.4.637
Title & Authors
Photoluminescence of Hexagonal Boron Nitride (h-BN) Film Jin, Moon-Seog; Kim, Nam-Oh;
Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed -ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.