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Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films as Gate Dielectric for Organic Thin Film Transistor
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 Title & Authors
Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films as Gate Dielectric for Organic Thin Film Transistor
Ao, Wei; Lim, Jae-Sung; Shin, Paik-Kyun;
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 Abstract
Plasma polymerized methyl methacrylate (ppMMA) thin films were deposited by plasma polymerization technique with different plasma powers and subsequently thermally treated at temperatures of 60 to . To find a better ppMMA preparation technique for application to organic thin film transistor (OTFT) as dielectric layer, the chemical composition, surface morphology, and electrical properties of ppMMA were investigated. The effect of ppMMA thin-film preparation conditions on the resulting thin film properties were discussed, specifically O-H site content in the pMMA, dielectric constant, leakage current density, and hysteresis.
 Keywords
Plasma polymerized methyl methacrylate (ppMMA);Organic thin film transistor (OTFT);Dielectric layer;Hysteresis;
 Language
English
 Cited by
1.
Electrical conduction mechanism in plasma polymerized 2-(diethylamino)ethyl methacrylate thin films, Polymer Engineering & Science, 2015, 55, 12, 2729  crossref(new windwow)
2.
Effect of heat treatment on the structural and optical characteristics of plasma deposited 2-(diethylamino)ethyl methacrylate thin films by a capacitively coupled glow discharge plasma system, Physica Scripta, 2013, 88, 4, 045502  crossref(new windwow)
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