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Highly transparent and resistive nanocrystalline ZnO-SnO2 films prepared by rf magnetron sputtering
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 Title & Authors
Highly transparent and resistive nanocrystalline ZnO-SnO2 films prepared by rf magnetron sputtering
Cha, Chun-Nam; Choi, Mu-Hee; Ma, Tae-Young;
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 Abstract
ZnO- films were deposited by rf magnetron sputtering using a ZnO- (2:1 molar ratio) target. The target was made from a mixture of ZnO and powders calcined at . The working pressure was 1 mTorr, and the rf power was 120 W. The ratio of oxygen to argon (:Ar) was varied from 0% to 10%, and the substrate temperature was varied from to . The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force spectroscopy (AFM). The ZnO- films deposited in :Ar
 Keywords
AFM;Rf magnetron sputtering;SEM;transmittance;XRD;ZnO- films;
 Language
English
 Cited by
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