Publisher : The Korean Institute of Electrical Engineers
DOI : 10.5370/JEET.2012.7.4.601
Title & Authors
A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance Jung, Eun-Sik; Cho, Yu-Seup; Kang, Ey-Goo; Kim, Yong-Tae; Sung, Man-Young;
Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.