Publisher : The Korean Institute of Electrical Engineers
DOI : 10.5370/JEET.2012.7.5.784
Title & Authors
High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method Lee, Yong-Wook; Kim, Eung-Soo; Shin, Bo-Sung; Lee, Sang-Mae;
In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide () thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.
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F. J. Morin, "Oxides which show a metal-to-insulator transition at the neel temperature," Phys. Rev. Lett., vol. 3, pp. 34-36, 1959.
E. Arcangeletti, L. Baldassarre, D. D. Castro, S. Lupi, L. Malavasi, C. Marini, A. Perucchi, and P. Postorino, "Evidence of a pressure-induced metallization process in monoclinic $VO_2$," Phys. Rev. Lett., vol. 98, pp. 196406(1-4), 2007.
A. Cavalleri, Cs. Tóth, C. W. Siders, J. A. Squier, F. Ráksi, P. Forget, and J. C. Kieffer, "Femtosecond structural dynamics in $VO_2$ during an ultrafast solidsolid phase transition," Phys. Rev. Lett., vol. 87, pp. 237401(1-4), 2001.
H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, "Mechanism and observation of Mott transition in $VO_2$-based two- and three-terminal devices," N. J. Phys., vol. 6, pp. 52-70, 2004.
S. Lysenko, A. J. Rua, V. Vikhnin, J. Jimenez, F. Fernandez, and H. Liu, "Light-induced ultrafast phase transitions in $VO_2$ thin film," Appl. Surf. Sci., vol. 252, pp. 5512-5515, 2006.
S. Chen, H. Ma, X. Yi, H. Wang, X. Tao, M. Chen, X. Li, and C. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Tech., vol. 45, pp. 239-242, 2004.
C. Chen, X. Yi, X. Zhao, and B. Xiong, "Characterizations of $VO_2$-based uncooled microbolometer linear array," Sens. Actuators A, vol. 90, pp. 212-214, 2001.
C. Chen and Z. Zhou, "Optical phonons assisted infrared absorption in $VO_2$ based bolometer," Appl. Phys. Lett., vol. 91, pp. 011107(1-3), 2007.
B.-J. Kim, Y. W. Lee, B.-G. Chae, S. J. Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, "Temperature dependence of the first-order metal-insulator transition in $VO_2$ and programmable critical temperature sensor," Appl. Phys. Lett., vol. 90, pp. 023515(1-3), 2007.
C.-R. Cho, S. Cho, S. Vadim, R. Jung, and I. Yoo, "Current-induced metal-insulator transition in $VO_x$ thin film prepared by rapid-thermal-annealing," Thin Solid Films, vol. 495, pp. 375-379, 2006.
Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, "Photo-assisted electrical gating in a twoterminal device based on vanadium dioxide thin film," Opt. Express, vol. 15, pp. 12108-12113, 2007.
B.-G. Chae, H.-T. Kim, S. J. Yun, Y. W. Lee, B.-J. Kim, D.-H. Youn, and K.-Y. Kang, "Highly oriented $VO_2$ thin films prepared by sol-gel deposition," Electrochem. Solid-State Lett., vol. 9, pp. C12-C14, 2006.
Y. W. Lee, B.-J. Kim, J.-W. Lim, S. J. Yun, S. Choi, B.-G. Chae, G. Kim, and H.-T. Kim, "Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film," Appl. Phys. Lett., vol. 92, pp. 162903(1-3), 2008.