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High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method
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 Title & Authors
High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method
Lee, Yong-Wook; Kim, Eung-Soo; Shin, Bo-Sung; Lee, Sang-Mae;
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In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide () thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.
Vanadium dioxide;Thin film;Junction device;Phase transition;Laser-induced breakdown;
 Cited by
Thermally- or optically-biased memristive switching in two-terminal $VO_2$ devices,Seo, Giwan;Kim, Bong-Jun;Kim, Hyun-Tak;Lee, Yong Wook;

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