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Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process
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 Title & Authors
Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process
Han, Sang-Bo;
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 Abstract
The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and on , respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.
 Keywords
Chemical vapor deposition;Cyclo-hexane;Diamond films;Electron temperature;Optical emission spectroscopy;Oxygen;
 Language
English
 Cited by
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