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Effects of Annealing Temperature on Properties of Al-Doped ZnO Thin Films prepared by Sol-Gel Dip-Coating
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 Title & Authors
Effects of Annealing Temperature on Properties of Al-Doped ZnO Thin Films prepared by Sol-Gel Dip-Coating
Jun, Min-Chul; Koh, Jung-Hyuk;
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 Abstract
Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap () of these films was increased with increasing post-heating temperature. A minimum resistivity of was observed at .
 Keywords
Al-doped ZnO;Transparent conducting oxide;Sol-Gel process;Thin films;
 Language
English
 Cited by
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Mg와 ZnO 함량변화에 따른 MAZO, MIZO 박막의 특성비교,장준성;김인영;정채환;문종하;김진혁;

Current Photovoltaic Research, 2015. vol.3. 3, pp.101-105
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