Advanced SearchSearch Tips
High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation
Kim, Minki; Seok, Ogyun; Han, Min-Koo; Ha, Min-Woo;
  PDF(new window)
We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 and that of the conventional device was 1116.7 . The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.
AlGaN;GaN;HEMT;Oxidation;Nickel oxide;
 Cited by
Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope, Journal of Electrical Engineering and Technology, 2015, 10, 3, 1131  crossref(new windwow)
S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, "GaN: Processing, defects, and devices", J. Appl. Phys., Vol. 86, No. 1, pp.1-78, July 1999. crossref(new window)

O. Seok. W. Ahn, M.-K. Han, and M.-W. Ha, "New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al2O3/Ga2O3 Stacks", Jpn. J. Appl. Phys., Vol. 51, No. 10, pp. 101001, Oct. 2012. crossref(new window)

O. Seok, W. Ahn, M.-K. Han, and M.-W. Ha, "Effect of $Ga_2O_3$ sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors", J. Vac. Sci. Technol. B, Vol. 31, No. 1, pp. 011203, Jan. 2013. crossref(new window)

J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Polarization effects, surface states, and the source of electrons in AlGaN/ GaN heterostructure field effect transistors", Appl. Phys. Lett., Vol. 77, No. 2, pp.250-252, July 2000. crossref(new window)

R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs", IEEE Trans. Electron Devices, Vol. 48, No. 3, pp. 560-566, March 2001. crossref(new window)

Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, and T. Mizutani, "Effect of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors", Appl. Phys. Lett., Vol. 84, No. 12, pp.2184-2186, March 2004. crossref(new window)

B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, "The Effect of Surface Passivation on the Microwave Characteristics of Undoped AlGaN/GaN HEMT's", IEEE Electron Device Lett., Vol. 21, No. 6, pp.268-270, June 2000. crossref(new window)

M.-W. Ha, S.-C. Lee, J.-C. Her, K.-S. Seo, and M.-K. Han, "New Inductively Coupled Plasma-Chemical Vapor Deposition $SiO_2$ Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors", Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3391-3394, April 2006. crossref(new window)

N.-Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, and T. P. Ma, "Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs", in Proceedings of IEDM Tech. Dig., pp.589-592, Washington D.C., U.S.A., Dec. 2001.

H. Kim, J. Lee, D. Liu, and W. Lu, "Gate current leakage and breakdown mechanism in unpassivated AlGaN/GaN high electron mobility transistors by post-gate annealing", Appl. Phys. Lett., Vol. 86, No. 14, pp.143505, March 2005. crossref(new window)

Y. S. Kim, M. W. Ha, M. K. Kim, and M. K. Han, "AlGaN/GaN Schottky Barrier Diode on Si Substrate Employing $NiO_x$/Ni/Au Contact", Jpn. J. Appl. Phys., Vol. 51, pp.09MC01, Sep. 2012. crossref(new window)

T. Maeda, Y. Koide, and M. Murakami, "Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN", Appl. Phys. Lett., Vol. 75, No. 26, pp.4145-4147, Dec. 1999. crossref(new window)

N. Kaneko, O. Machida, M. Yanagihara, S. Iwakami, R. Baba, H. Goto, and A. Iwabuchi, "Normally-Off AlGaN/GaN HFETs using $NiO_x$ Gate with Recess", in Proceedings of Int. Symp. Power Semiconductor Devices and ICs, pp.25-28, Barcelona, Spain, June 2009.

C. S. Oh, C. J. Youn, G. M. Yang, K. Y. Lim, and J. W. Yang, "AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator", Appl. Phys. Lett., Vol. 85, No. 18, pp. 4214-4216, Nov. 2004. crossref(new window)

T. Hashizume and H. Hasegawa, "Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes", Appl. Surf. Sci., Vol. 234, No. 1-4, pp. 387-394, July 2004. crossref(new window)