Advanced SearchSearch Tips
Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors
Samuel, T.S.Arun; Balamurugan, N.B.; Sibitha, S.; Saranya, R.; Vanisri, D.;
  PDF(new window)
In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.
Tunnel field effect transistor (TFET);Band to band Tunneling;Analytical model;Poisson equation;Parabolic approximation;Surface potential;
 Cited by
고주파모델링을 위한 이중게이트 FET의 열잡음 파라미터 추출과 분석,김규철;

한국전자통신학회논문지, 2013. vol.8. 11, pp.1633-1640 crossref(new window)
Analytical Surface Potential Model with TCAD Simulation Verification for Evaluation of Surrounding Gate TFET,Samuel, T.S. Arun;Balamurugan, N.B.;Niranjana, T.;Samyuktha, B.;

Journal of Electrical Engineering and Technology, 2014. vol.9. 2, pp.655-661 crossref(new window)
Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET, International Journal of Electronics, 2016, 1  crossref(new windwow)
Extraction and Analysis of Dual Gate FET Noise Parameter for High Frequency Modeling, The Journal of the Korea institute of electronic communication sciences, 2013, 8, 11, 1633  crossref(new windwow)
P. K.Tiwari and S. Jit, "A Subthreshold Swing Model for Symmetric Double Gate (DG) MOSFETs with Vertical Gaussian Doping", Journal of Semiconductor Technology and Science, Vol.10, No.2, pp.107-16, Jun. 2010. crossref(new window)

Z. Ding, G. Hu, J. Gu, R. Liu, and L.Wang "An analytical model for the subthreshold swing of double-gate MOSFETs," International Workshop on IWJT, 2010, pp.1-4.

Q. Zhang, W. Zhao, and A. Seabaugh, "Lowsubthreshold-swing tunnel transistors," IEEE Electron Device Lett., Vol. 27, No. 4, pp. 297-300, Apr. 2006. crossref(new window)

J. Appenzeller, Y.-M. Lin, J. Knoch, and P. Avouris, "Band-to-band tunneling in carbon nanotube fieldeffect transistors," Phys. Rev. Lett., Vol.93, No.19, pp.196805, Nov. 2004. crossref(new window)

K. Boucart and A. M. Ionescu, "Double-gate tunnel FET with high-K gate dielectric," IEEE Trans. Electron Devices, Vol. 54, No. 7, pp. 1725-1733, Jul. 2007. crossref(new window)

K. K. Bhuwalka, J. Schulze, and I. Eisele, "Scaling the vertical tunnel FET with tunnel band gap modulation and gate work function engineering," IEEE Trans. Electron Devices, Vol. 52, No. 5, pp. 909-917, May. 2005. crossref(new window)

L. Wang, E. Yu, Y. Taur and P. Asbeck, "Design of tunneling field effect transistors based on staggered hetero junctions for ultra low power applications," IEEE Electron Device Lett., Vol. 31, No. 5, pp. 431-433, May. 2010. crossref(new window)

O. M. Nayfeh, C. N. Chleirigh, J. Hennessy, L. Gomez, J. L. Hoyt and D. A. Antoniadis, "Design of Tunneling Field-Effect Transisitors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions," IEEE Electron Device Lett., Vol. 29, No. 9, pp- 1074-1077, Sep. 2008. crossref(new window)

J. Appenzeller, Y. M. Lin, J. Knoch, Z. H. Chen, and P. Avouris, "Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design," IEEE Trans. Electron Devices, Vol. 52, No. 12, pp. 2568-2576,Dec. 2005. crossref(new window)

K. Boucart and A. M. Ionescu, "Double-gate tunnel FET with high- k gate dielectric," IEEE Trans. Electron Devices, Vol. 54, No. 7, pp. 1725-1733, Jul. 2007. crossref(new window)

S. Saurabh and M. Jagadesh Kumar, "Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor," IEEE Trans. on Electron Devices, Vol. 58, No. 2, pp. 404-410, Feb. 2011. crossref(new window)

M.J.Lee and W.Y.Choi, "Analytical Model of a single-gate silicon-on-insulator (SOI) tunneling fieldeffect transistors (TFETs)," Solid-State Elec., Vol. 63, pp.110-114, Sep. 2011. crossref(new window)

C. Shen, S.-L. Ong, C.-H. Heng, G. Samudra, and Y.-C. Yeo. "A variational approach to the twodimensional nonlinear Poisson's equation for the modeling of tunneling transistors," IEEE Electron Device Lett., Vol. 29, No. 11, pp. 1252-1255, Oct. 2008. crossref(new window)

M.G. Bardon, H.P.Neves, R.Puers, and C.V.Hoof, "Pseudo-two-dimensional model for double-gate tunnel FETs considering the junctions depletion regions", IEEE Trans., Electron Devices, Vol.57, No.4, pp. 827-34, Apr. 2010. crossref(new window)

A. S. Verhulst, W. G. Vandenberghe, K. Maex, and G. Groeseneken, "Boosting the on-current of a nchannel nanowire tunnel field-effect transistor by source material optimization," J. Appl. Phys., Vol. 104, No. 6 pp. 064 514-1,Sep. 2008. crossref(new window)

E.O.Kane, "Zener tunneling in semiconductors," J.Phys. Chem.Solides, Vol. 12, No. 2, pp.181-188, Jan. 1960. crossref(new window)

E.O. Kane, "Theory of tunneling," J. Appl. Phys., Vol. 32, No. 1, pp. 83-91, Jan.1961. crossref(new window)