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Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2 and InSe2 Targets
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Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2 and InSe2 Targets
Kim, Nam-Hoon; Jun, Young-Kil; Cho, Geum-Bae;
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Chalcopyrite (CIS) thin films were prepared without Se- / S-containing gas by co-sputtering using and selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter decreased and the inter-planar spacing increased in the RTA-treated CIS thin films annealed at a , which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin films led to a decrease in resistivity due to an increase in Cu composition at annealing temperatures . The optical band gap energy () of CIS thin films decreased to 1.127 eV in RTA-treated CIS thin films annealed at due to the improved crystallinity, elevated carrier concentration and decreased In composition.
Thin Film; and Targets;Co-sputtering;RTA;
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