Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2 and InSe2 Targets

Title & Authors
Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2 and InSe2 Targets
Kim, Nam-Hoon; Jun, Young-Kil; Cho, Geum-Bae;

Abstract
Chalcopyrite $\small{CuInSe_2}$ (CIS) thin films were prepared without Se- / S-containing gas by co-sputtering using $\small{CuSe_2}$ and $\small{InSe_2}$ selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter $\small{{\eta}}$ decreased and the inter-planar spacing $\small{d_{(112)}}$ increased in the RTA-treated CIS thin films annealed at a $\small{400^{\circ}C}$, which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin films led to a decrease in resistivity due to an increase in Cu composition at annealing temperatures $\small{{\geq}35}$$\small{0^{\circ}C}$. The optical band gap energy ($\small{E_g}$) of CIS thin films decreased to 1.127 eV in RTA-treated CIS thin films annealed at $\small{400^{\circ}C}$ due to the improved crystallinity, elevated carrier concentration and decreased In composition.
Keywords
Thin Film;$\small{CuSe_2}$ and $\small{InSe_2}$ Targets;Co-sputtering;RTA;
Language
English
Cited by
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