F. Guedon, S. Singh, R. McMahon, and F. Udrea, "Boost Converter with Sic JFETs: Comparison with Coolmos and Tests at Elevated Case Temperature," Power Electronics, IEEE Transactions on, vol. 28, no. 4, pp. 1938-1945, 2013.
P. Ranstad, H. Nee, J. Linner, and D. Peftitsis, "An Experimental Evaluation of SiC Switches in Soft Switching Converters," Power Electronics, IEEE Transactions on, vol. PP, no. 99, pp. 1-1, 2013.
M. S. Mazzola and R. Kelley, "Application of A Normally off Silicon Carbide Power JFET in A Photovoltaic Inverter," in Applied Power Electronics Conference and Exposition, 2009. APEC 2009. Twenty-Fourth Annual IEEE, 2009, pp. 649-652.
P. Ning, R. Lai, D. Huff, F. Wang, K. D. T. Ngo, V. Immanuel, and K. Karimi, "SiC Wirebond Multichip Phase-leg Module Packaging Design and Testing for Harsh Environment," Power Electronics, IEEE Transactions on, vol. 25, no. 1, pp. 16-23, 2010.
R. Wood and T. Salem, "Evaluation of A 1200-v, 800-a All-sic Dual Module," Power Electronics, IEEE Transactions on, vol. 26, no. 9, pp. 2504-2511, 2011.
F. Guedon, S. Singh, R. McMahon, and F. Udrea, "Gate Driver for SiC JESTs with Protection Against Normally-on Behaviour Induced fault," Electronics Letters, vol. 47, no. 6, pp. 375-377, 2011.
H. Zhang and L. Tolbert, "Efficiency of SiC JFET-based Inverters," in Industrial Electronics and Applications, 2009. ICIEA 2009. 4th IEEE Conference on, 2009, pp. 2056-2059.
P. Friedrichs, "Unipolar SiC Devices - Latest Achievements on the Way to A New Generation of High Voltage Power Semiconductors," in Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International, vol. 1, 2006, pp. 1-5.
T. Sarkar and S. Mazumder, "Photonic Compensation of Temperature-induced Drift of SiC-DMOSFET Switching Dynamics," Power Electronics, IEEE Transactions on, vol. 25, no. 11, pp. 2704-2709, 2010.
M. Gurfinkel, J. Suehle, J. Bernstein, Y. Shapira, A. Lelis, D. Habersat, and N. Goldsman, "Ultra-fast Characterization of Transient Gate Oxide Trapping in SiC MOSFETs," in Reliability physics symposium proceedings. 45th annual. IEEE international, 2007, pp. 462-466.
R. Lai, F. Wang, R. Burgos, D. Boroyevich, D. Zhang, and P. Ning, "A Shoot-through Protection Scheme for Converters Built with SiC JFETs," Industry Applications, IEEE Transactions on, vol. 46, no. 6, pp. 2495-2500, 2010.
R. Green, A. Lelis, and D. Habersat, "Application of Reliability Test Standards to SiC Power MOSFETs," in Reliability Physics Symposium (IRPS), 2011 IEEE International, 2011, pp. EX.2.1-EX.2.9.
K. Wada, S.-i. Nishizawa, and H. Ohashi, "Design and Implementation of A Non-destructive Test Circuit for SiC-MOSFETs," in Power Electronics and Motion Control Conference (IPEMC), 2012 7th International, vol. 1, 2012, pp. 10-15.
B. Wrzecionko, D. Bortis, J. Biela, and J. Kolar, "Novel Ac-coupled Gate Driver for Ultrafast Switching of Normally Off SiC JFETs," Power Electronics, IEEE Transactions on, vol. 27, no. 7, pp. 3452-3463, 2012.
W. Saito, T. Nitta, Y. Kakiuchi, Y. Saito, K. Tsuda, I. Omura, and M. Yamaguchi, "Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-voltage GaN-HEMTs with Optimized Field-plate Structure," Electron Devices, IEEE Transactions on, vol. 54, no. 8, pp. 1825-1830, 2007.
A. Fayyaz and A. Castellazzi, "Performance and Robustness Testing of SiC Power Devices," in Power Electronics, Machines and Drives (PEMD 2012), 6th IET International Conference on, 2012, pp. 1-5.
X.-B. Chen and J. Sin, "Optimization of the Specific On-resistance of The Coolmostm," Electron Devices, IEEE Transactions on, vol. 48, no. 2, pp. 344-348, 2001.
R. Gelagaev, P. Jacqmaer, J. Everts, and J. Driesen, "A Novel Voltage Clamp Circuit for the Measurement of Transistor Dynamic On-resistance," in Instrumentation and Measurement Technology Conference (I2MTC), 2012 IEEE International, 2012, pp. 111-116.
J. Joh, J. del Alamo, and J. Jimenez, "A Simple Current Collapse Measurement Technique for GaN High-electron Mobility Transistors," Electron Device Letters, IEEE, vol. 29, no. 7, pp. 665-667, 2008.
B. Lu, T. Palacios, D. Risbud, S. Bahl, and D. Anderson, "Extraction of Dynamic On-resistance in GaN Transistors: Under Soft- and Hard-switching Conditions," in Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE, 2011, pp. 1-4.
K. Sheng, "Maximum Junction Temperatures of SiC Power Devices," Electron Devices, IEEE Transactions on, vol. 56, no. 2, pp. 337-342, 2009.