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Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation
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 Title & Authors
Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation
Roh, Hee Bum; Seo, Jae Hwa; Yoon, Young Jun; Bae, Jin-Hyuk; Cho, Eou-Sik; Lee, Jung-Hee; Cho, Seongjae; Kang, In Man;
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In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at , where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain (), unit-gain frequency (), and cut-off frequency (). The Ge/GaAs HGD pnpn TFET demonstrated , , THz and .
Frequency response;Gate-all-around;Heterojunction;Tunneling field-effect transistor;Hetero-gate-dielectric;TCAD;Mixed-mode simulation;
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Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters, Journal of Applied Physics, 2015, 118, 9, 095708  crossref(new windwow)
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