Publisher : The Korean Institute of Electrical Engineers
DOI : 10.5370/JEET.2015.10.3.1169
Title & Authors
Microfabrication of Vertical Carbon Nanotube Field-Effect Transistors on an Anodized Aluminum Oxide Template Using Atomic Layer Deposition Jung, Sunghwan;
This paper presents vertical carbon nanotube (CNT) field effect transistors (FETs). For the first time, the author successfully fabricated vertical CNT-based FETs on an anodized aluminum oxide (AAO) template by using atomic layer deposition (ALD). Single walled CNTs were vertically grown and aligned with the vertical pores of an AAO template. By using ALD, a gate oxide material (Al2O3) and a gate metal (Au) were centrally located inside each pore, allowing the vertical CNTs grown in the pores to be individually gated. Characterizations of the gated/vertical CNTs were carried and the successful gate integration with the CNTs was confirmed.
S. J. Tans, A. R. M. Verschueren, and C. Dekker, “Room-temperature transistor based on a single carbon nanotube,” Nature, vol. 393, pp. 49-52, May 1998.
R. Martel, T. Schmidt, H. Shea, T. Hertel, and Ph. Avouris, “Single- and multi-wall carbon nanotube field-effect transistors ,” Applied Physics Letters, vol. 73, pp. 2447, 1998.
A. Javey, H. Kim, M. Brink, Q. Wangi, A. Ural, J. Guo, P. McIntire, P. McEuen, M. Lunstrom, and H. Dai, “High-k dielectrics for advanced carbon-nanotube transistors and logic gates,” Nature Material, vol. 1, pp. 241-246, Dec. 2002.
A. D. Franklin, R. A. Sayer, T. D. Sands, T. S. Fisher, and D. B. Janes, “Toward surround gates on vertical single-walled carbon nanotube devices,” Journal of Vacuum Science & Technology, vol. 27, no. 821, pp. 821-826, Mar. 2009.
S. Jung, “Vertical semiconducting single-walled carbon nanotube Schottky diode,” Journal of the Korean Physical Society, vol. 65, no. 1, pp. L1-L5, July 2014.
G. Zhang, P. Qi, X. Wang, Y. Lu, X. Li, R. Tu, S. Bangsaruntip, D. Mann, L. Zhang, and H. Dai, “Selective etching of metallic nanotubes by gas-phase reaction,” Science, vol. 334, pp. 974-977, Nov. 2006.
A. Javey, J.Guo, Q. Wang, M. Lundstrom and H. Dai, “Ballistic carbon nanotube field-effect transistors,” Nature, vol. 424, pp. 654-657, Aug. 2003.
M. R. Machmann, A. D. Franklin, A. Scott, D. B. Janes, T. D. Sands, and T. S. Fisher, "Lithographyfree in situ Pd contacts to templated single -walled carbon nanotubes," vol. 6, no. 12, pp. 2712-2717, Sep. 2006.
D. B. Farmer and R. G. Gordon, “ALD of high-kdielectrics on suspended functionalized SWNT,” Electrochemical and Solid-State Letters, vol. 8, no. 4, pp. G89-G91, Feb. 2005.
D.B. Farmer and R.G. Gordon, “Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization,” Nano Letters, vol. 6, no. 4, pp. 699-703, Feb. 2006.