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Analysis of Electron Transport Coefficients in Binary Mixtures of TEOS Gas with Kr, Xe, He and Ne Gases for Using in Plasma Assisted Thin-film Deposition
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 Title & Authors
Analysis of Electron Transport Coefficients in Binary Mixtures of TEOS Gas with Kr, Xe, He and Ne Gases for Using in Plasma Assisted Thin-film Deposition
Tuan, Do Anh;
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 Abstract
The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td
 Keywords
TEOS;thin-film;Electron transport coefficient;Plasma assisted thin-film deposition;Boltzmann equation;
 Language
English
 Cited by
 References
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