New Modeling of Switching Devices Considering Power Loss in Electromagnetic Transients Program Simulation

- Journal title : Journal of Electrical Engineering and Technology
- Volume 11, Issue 3, 2016, pp.592-601
- Publisher : The Korean Institute of Electrical Engineers
- DOI : 10.5370/JEET.2016.11.3.592

Title & Authors

New Modeling of Switching Devices Considering Power Loss in Electromagnetic Transients Program Simulation

Kim, Seung-Tak; Park, Jung-Wook; Baek, Seung-Mook;

Kim, Seung-Tak; Park, Jung-Wook; Baek, Seung-Mook;

Abstract

This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a user-defined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.

Keywords

Conduction loss;Curve fitting;Electromagnetic transients program simulation;Insulated-gate bipolar transistor;Interpolation;Modeling;Switching loss;

Language

English

Cited by

References

1.

A. D. Rajapakse A. M. Gole, and P. L.Wilson, "Electromagnetic transient simulation models for accurate representation of switching losses and thermal performance in power electronic systems," IEEE Trans. Power Del., vol. 20, no. 1, pp. 319-327, Jan. 2005.

2.

Z. Xu, M. Li, F. Wang, Z. Liang, "Investigation of Si IGBT operation at 200 C for traction applications," IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2604-2615, May 2013.

3.

Y. L. Xiong, S. Sun, H. W. Jia, P. Shea, and Z. J. Shen, "New physical insights on power MOSFET switching losses," IEEE Trans. Power Electron., vol. 24, no. 2, pp. 525-531, Feb. 2009.

4.

Y. Ren, M. Xu, J. Zhou, and F. C. Lee, "Analytical loss model of power MOSFET," IEEE Trans. Power Electron., vol. 21, no. 2, pp. 310-319, Mar. 2004.

5.

W. Eberle, Z. Zhang, Y. F. Liu, and P. C. Sen, "A practical switching loss model for buck voltage regulators," IEEE Trans. Power Electron., vol. 24, no. 3, pp. 700-713, Mar. 2009.

6.

Y. Wu, M. A. Shafi, A. M. Knight, and R. A. McMahon, "Comparison of the effects of continuous and discontinuous PWM schemes on power losses of voltage-sourced inverters for induction motor drives," IEEE Trans. Power Electron., vol. 26, no. 1, pp. 182-191, Jan. 2011.

7.

S. Ji, Z. Zhao, T. Lu, L. Yuan, and H. Yu, “HVIGBT physical model analysis during transient,” IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2616-2624, May 2013.

8.

M. Rodriguez, A. Rodriguez, P. F. Miaja, D. G. Lamar, and J. S. Zuniga, "An insight into the switching process of power MOSFETs: An improved analytical losses model," IEEE Trans. Power Electron., vol. 25, no. 6, pp. 1626-1640, Jun. 2010.

9.

A. M. Bazzi, P. T. Krein, J. W. Kimball, and K. Kepley, "IGBT and diode loss estimation under hysteresis switching," IEEE Trans. Power Electron., vol. 27, no. 3, pp. 1044-1048, Mar. 2012.

10.

C. Edrington, O. Vodyakho, M. Steurer, S. Azongha, F. Fleming, and M. Krishnamurthy, "Power semiconductor loss evaluation in voltage source IGBT converters for three-phase induction motor drives," in Proc. Vehicle Power and Propulsion Conf., 2009. VPPC '09. IEEE, Dearborn, MI, Sep. 2009, pp. 1434-1439.

11.

G. J. Su and P. Ning, "Loss modeling and comparison of VSI and RB-IGBT based CSI in traction drive applications," in Proc. Transportation Electrification Conf. and Expo (ITEC), 2013 IEEE, Detroit, MI, Jun. 2013, pp. 1-7.

12.

B. T. Cassimere, S. D. Sudhoff, B. N. Cassimere, D. C. Aliprantis, and M.D. Swinney, “IGBT and PN junction diode lossmodeling for system simulations,” in Proc. IEEE Int. Elec. Mach. Drives Conf. (IEMDC), San Antonio, TX, May 2005, pp. 941-949.

13.

C. N. Ho, H. Breuninger, S. Pettersson, G. Escobar, L. A. Serpa and A. Coccia, "Practical design and implementation procedure of an interleaved boost converter using SiC diodes for PV applications," IEEE Trans. Power Electron., vol. 27, no. 6, pp. 2835-2845, Jun. 2012.

14.

Mitsubishi Electric Corp. (2005, May.). PM75CLA120 Datasheet [Online]. Available: http://www.mitsubishielectric.com/semiconductors/datasheet/

15.

G. D. Irwin, D. A. Woodford, and A. Gole, "Precision simulation of PWM controller," in Proc. Int. Conf. Power System Transients, Rio de Janeiro, Brazil, Jun. 2001, pp. 301-306.

16.

B. DeKelper, L. Dessaint, K. Al-Haddad, and H. Nakra, "A comprehensive approach to fixed-step simulation of switched circuits," IEEE Trans. Power Electron., vol. 17, no. 2, pp. 216-224, Mar. 2002.

17.

J. W. Kimball, "Modeling controlled switches and diodes for electro-thermal simulation," in Proc. IEEE Power Electron. Specialists Conf., June 2005, pp. 2175-2179.

18.

P. R. Palmer, E. Santi, J. L. Hudgins, X. Kang, J. C. Joyce, and P. Y. Eng, "Circuit simulator models for the diode and IGBT with full temperature dependent features," IEEE Trans. Power Electron., vol. 18, no. 5, pp. 1220-1229, Sep. 2003.

19.

A. D. Rajapakse, A.M. Gole and P. L. Wilson, "Approximate loss formula for estimation of IGBT switching losses through EMTP-type simulations," presented at the 6th Int. Conf. of Power Systems Transients, Montreal, QC, Canada, Jun. 2005.

20.

Mitsubishi Electric Corp. (2012, Dec.). IPM L-series application note. [Online]. Available: http://www.mitsubishielectric.com/semiconductors/products/powermod/note/

21.

E. Roman, R. Alonso, P. Ibanez, S. Elorduizapatarietxe and D. Goitia, “Intelligent PV module for grid-connected PV systems,” IEEE Trans. Ind. Electron., vol. 53, no. 4, pp. 1066-1073, Jun. 2006.