Publisher : The Korean Institute of Electrical Engineers
DOI : 10.5370/JEET.2016.11.4.939
Title & Authors
Low Reverse Saturation Current Density of Amorphous Silicon Solar Cell Due to Reduced Thickness of Active Layer Iftiquar, S M; Yi, Junsin;
One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (Nd) of the active layer on the J-V curve. When the active layer thickness was varied (for Nd
Amorphous silicon solar cell;Diode equivalent model;Active layer thickness;
Silicon germanium active layer with graded band gap and µc-Si:H buffer layer for high efficiency thin film solar cells, Materials Science in Semiconductor Processing, 2016, 56, 183
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