JOURNAL BROWSE
Search
Advanced SearchSearch Tips
A D-Band Integrated Signal Source Based on SiGe 0.18μm BiCMOS Technology
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
A D-Band Integrated Signal Source Based on SiGe 0.18μm BiCMOS Technology
Jung, Seungyoon; Yun, Jongwon; Rieh, Jae-Sung;
  PDF(new window)
 Abstract
This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is , including RF and DC pads.
 Keywords
Amplifier;D-Band;Frequency Doubler;Oscillator;Signal Source;
 Language
English
 Cited by
 References
1.
K. Okada, R. Minami, Y. Tsukui, S. Kawai, Y. Seo, S. Sato, et al., "A 64-QAM 60GHz CMOS transceiver with 4-channel bonding," in Proceedings of 2014 IEEE International Solid-State Circuits Conference, San Francisco, CA, 2014, pp. 346-347.

2.
B. Cetinoneri, Y. A. Atesal, A. Fung, and G. M. Rebeiz, "W-band amplifiers with 6-dB noise figure and milliwatt-level 170-200-GHz doublers in 45-nm CMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 3, pp. 692-701, 2012. crossref(new window)

3.
D. Huang, T. R. LaRocca, L. Samoska, A. Fung, and M. C. F. Chang, "324 GHz CMOS frequency generator using linear superposition technique," in Proceedings of 2008 IEEE International Solid-State Circuits Conference, San Francisco, CA, 2008, pp. 476-477.

4.
E. Seok, C. Cao, D. Shim, D. J. Arenas, D. B. Tanner, C. M. Hung, et al., "A 410GHz CMOS push-push oscillator with an on-chip patch antenna," in Proceedings of 2008 IEEE International Solid-State Circuits Conference, San Francisco, CA, 2008, pp. 472-473.

5.
T. Mitsunaka, K. Iizuka, and M. Fujishima, "37-mW CMOS voltage-controlled oscillators and dividers for 134-GHz phase-locked loop synthesizer," in Proceedings of 2014 9th European Microwave Integrated Circuit Conference (Eu-MIC), Rome, Italy, 2014, pp. 293-296.

6.
J. Yun, D. Yoon, S. Jung, M. Kaynak, B. Tillack, and J. S. Rieh, "Two 320 GHz signal sources based on SiGe HBT technology," IEEE Microwave and Wireless Components Letters, vol. 25, no. 3, pp. 178-180, 2015. crossref(new window)

7.
J. Yun, N. Kim, D. Yoon, H. Kim, S. Jeon, and J. S. Rieh, "A 248-262 GHz InP HBT VCO with interesting tuning behavior," IEEE Microwave and Wireless Components Letters, vol. 24, no. 8, pp. 560-562, 2014. crossref(new window)

8.
N. Kim, K. Kim, and J. S. Rieh, "A triple-push voltage controlled oscillator in 0.13-mm RFCMOS technology operating near 177 GHz," IEICE Transactions on Electronics, vol. 97C, no. 5, pp. 444-447, 2014.

9.
Y. S. J. Shiao, G. W. Huang, C. W. Chuang, H. H. Hsieh, C. P Jou, and F. L. Hsueh, "A 100-GHz varactorless CMOS VCO using source degeneration," in Proceedings 2012 IEEE MTT-S International Microwave Symposium Digest (MTT), Montreal, Canada, 2012, pp. 1-3.

10.
A. Balteanu, I. Sarkas, V. Adinolfi, E. Dacquay, A. Tomkins, D. Celi, et al., "Characterization of a 400-GHz SiGe HBT technology for low-power D-band transceiver applications," in Proceedings 2012 IEEE MTT-S International Microwave Symposium Digest (MTT), Montreal, Canada, 2012, pp. 1-3.

11.
S. P. Voinigescu, E. Dacquay, V. Adinolfi, I. Sarkas, A. Balteanu, A. Tomkins, et al., "Characterization and modeling of an SiGe HBT technology for transceiver applications in the 100-300-GHz range," IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 12, pp. 4024-4034, 2012. crossref(new window)

12.
M. Adnan and E. Afshari, "A 105-GHz VCO with 9.5% tuning range and 2.8-mW peak output power in a 65-nm bulk CMOS process," IEEE Transactions on Microwave Theory and Techniques, vol. 62, no. 4, pp. 753-762, 2014. crossref(new window)

13.
W. Z. Chen, T. Y. Lu, Y. T. Wang, J. T. Jian, Y. H. Yang, and K. T. Chang, "A 160-GHz frequency-translation phase-locked loop with RSSI assisted frequency acquisition," IEEE Transactions on Circuits and Systems I, vol. 61, no. 6, pp. 1648-1655, 2014. crossref(new window)

14.
S. Zeinolabedinzadeh, P. Song, M. Kaynak, M. Kamarei, B. Tillack, and J. D. Cressler, "Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology," in Proceedings of 2014 IEEE MTT-S International Microwave Symposium (IMS), Tampa, FL, 2014, pp. 1-4.

15.
W. Steyaert and P. Reynaert, "A 0.54 THz signal generator in 40 nm bulk CMOS with 22 GHz tuning range and integrated planar antenna," IEEE Journal of Solid-State Circuits, vol. 49, no. 7, pp. 1617-1626, 2014. crossref(new window)

16.
S. P. Voinigescu, A. Tomkins, E. Dacquay, P. Chevalier, J. Hasch, A. Chantre, et al., "A study of SiGe HBT signal sources in the 220-330-GHz range," IEEE Journal of Solid-State Circuits, vol. 48, no. 9, pp. 2011-2021, 2013. crossref(new window)

17.
P. Y. Chiang, O. Momeni, and P. Heydari, "A 200-GHz inductively tuned VCO with-7-dBm output power in 130-nm SiGe BiCMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 10, pp. 3666-3673, 2013. crossref(new window)