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Threshold Voltage Properties of OFET with CuPc Active Material
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 Title & Authors
Threshold Voltage Properties of OFET with CuPc Active Material
Lee, Ho-Shik; Kim, Seong-Geol;
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 Abstract
In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO2 as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at VDS
 Keywords
Copper phthalocyanine (CuPc);Current-voltage characteristics;Organic FET;Threshold voltage;
 Language
Korean
 Cited by
 References
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