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Electron Spin Transition Line-width of Mn-doped Wurtzite GaN Film for the Quantum Limit
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  • Journal title : Journal of Magnetics
  • Volume 17, Issue 1,  2012, pp.13-18
  • Publisher : The Korean Magnetics Society
  • DOI : 10.4283/JMAG.2012.17.1.013
 Title & Authors
Electron Spin Transition Line-width of Mn-doped Wurtzite GaN Film for the Quantum Limit
Park, Jung-Il; Lee, Hyeong-Rag; Lee, Su-Ho; Hyun, Dong-Geul;
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Starting with Kubo`s formula and using the projection operator technique introduced by Kawabata, EPR lineprofile function for a -doped wurtzite structure GaN semiconductor was derived as a function of temperature at a frequency of 9.49 GHz (X-band) in the presence of external electromagnetic field. The line-width is barely affected in the low-temperature region because there is no correlation between the resonance fields and the distribution function. At higher temperature the line-width increases with increasing temperature due to the interaction of electrons with acoustic phonons. Thus, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition systems.
electron paramagnetic resonance;projection operator;;GaN;line-width;spin Hamiltonian;wurtzite structure;
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