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Newly Designed Ion Beam Etcher with High Etch Rate
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  • Journal title : Journal of Magnetics
  • Volume 20, Issue 4,  2015, pp.366-370
  • Publisher : The Korean Magnetics Society
  • DOI : 10.4283/JMAG.2015.20.4.366
 Title & Authors
Newly Designed Ion Beam Etcher with High Etch Rate
Cheong, Hee-Woon;
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 Abstract
New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.
 Keywords
IBE (Ion Beam Etcher);M-ICP (Magnetized Inductively Coupled Plasma);Plasma density;R-wave;Etch rate;
 Language
English
 Cited by
 References
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