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An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs
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  • Journal title : Journal of Power Electronics
  • Volume 16, Issue 1,  2016, pp.374-387
  • Publisher : The Korean Institute of Power Electronics
  • DOI : 10.6113/JPE.2016.16.1.374
 Title & Authors
An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs
Liang, Mei; Zheng, Trillion Q.; Li, Yan;
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 Abstract
This paper derives an improved analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFETs. The proposed analytical model considers the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the trans-conductance. The turn-on process and the turn-off process are illustrated in detail, and equivalent circuits are derived and solved for each switching transition. The proposed analytical model is more accurate and matches better with experimental results than other analytical models. Note that switching losses calculated based on experiments are imprecise, because the energy of the junction capacitances is not properly disposed. Finally, the proposed analytical model is utilized to account for the effects of parasitic elements on the switching performance of a SiC MOSFET, and the circuit design rules for high frequency circuits are given.
 Keywords
Analytical model;Parasitic elements;SiC MOSFET;Switching loss;Switching performance;
 Language
English
 Cited by
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