JOURNAL BROWSE
Search
Advanced SearchSearch Tips
Loss Analysis and Soft-Switching Behavior of Flyback-Forward High Gain DC/DC Converters with a GaN FET
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
  • Journal title : Journal of Power Electronics
  • Volume 16, Issue 1,  2016, pp.84-92
  • Publisher : The Korean Institute of Power Electronics
  • DOI : 10.6113/JPE.2016.16.1.84
 Title & Authors
Loss Analysis and Soft-Switching Behavior of Flyback-Forward High Gain DC/DC Converters with a GaN FET
Li, Yan; Zheng, Trillion Q.; Zhang, Yajing; Cui, Meiting; Han, Yang; Dou, Wei;
  PDF(new window)
 Abstract
Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.
 Keywords
EPC;Flyback-forward;GaN FET;GaN Schottky diode;High gain;Loss analysis;
 Language
English
 Cited by
 References
1.
A. Lidow, J. Strydom, M. Rooij, and Y. Ma, GaN transistors for efficient power conversion, Power Conversion Publications, 2nd, 2012.

2.
K. S. Boutros, R. Chu, and B. Hughes, "Gan power electronics for automotive application," Energytech, pp.1-4, 2012.

3.
T. Morita, S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda. "99.3gan-based gate injection transistors," Applied Power Electronics Conference and Exposition (APEC), pp.481-484, 2011.

4.
S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, "Recent advances in gan power switching devices," Compound Semiconductor Integrated Circuit Symposium(CSICS), pp.1-4, Oct. 2010.

5.
M. J. Scott, J. Li, and J. Wang, "Applications of Gallium Nitride in power electronics," Power and Energy Conference at Illinois(PECI), pp. 1-7, Feb. 2013.

6.
M. J. Scott, K. Zou, E. Inoa, R. Duarte, Y. Huang, and J. Wang, "A Gallium Nitride switched-capacitor power inverter for photovoltaic applications," Applied Power Electronics Conference and Exposition(APEC), pp.46-52, Feb. 2012.

7.
M. J. Scott, K. Zou, J. Wang, C. Chen, M. Su, and L. Chen, "A Gallium Nitride Switched-Capacitor Circuit Using Synchronous Rectification," IEEE Trans. Ind. Appl., Vol. 49, No. 3, pp.1383-1391, May/Jun. 2013. crossref(new window)

8.
J. Delaine, P. O. Jeannin, D. Frey, and K. Guepratte, "Improvement of GaN transistors working conditions to increase efficiency of A 100W DC-DC converter," Applied Power Electronics Conference and Exposition(APEC), pp. 656-663, Mar. 2013.

9.
X. Ren, D. Reusch, S. Ji, Z. Zhang, M. Mu, and F. C. Lee, "Three-level driving method for GaN power transistor in synchronous buck converter," Energy Conversion Congress and Exposition(ECCE), pp.2949-2953, Sep. 2012.

10.
D. Reusch , F. C. Lee , D. Gilham , and Y. Su, "Optimization of a high density gallium nitride based non-isolated point of load module," Energy Conversion Congress and Exposition(ECCE), pp.2914-2920, Sep. 2012.

11.
S. Ji, D. Reusch, and F. C. Lee, “High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design,” IEEE Trans. Power Electron., Vol. 28, No. 9, pp. 4216-4226, Sep. 2013. crossref(new window)

12.
F. C. Lee and Q. Li, “High-Frequency Integrated Point-of-Load Converters: Overview,” IEEE Trans. Power Electron., Vol. 28, No. 9, pp. 4127-4136, Sep. 2013. crossref(new window)

13.
S. Ji, D. Reusch, and F. C. Lee, “High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design,” IEEE Trans. Power Electron., Vol. 28, No. 9, pp. 4216-4226, Sep. 2013. crossref(new window)

14.
X. Zhang, C. Yao, M. J. Scott, E. Davidson, J. Li, P. Xu, and J. Wang, "A GaN Transistor based 90 W Isolated Quasi-Switched-Capacitor DC/DC Converter for AC/DC Adapters," IEEE Workshop on Wide Bandgap Power Devices and Applications(WiPDA), pp. 15-12, Oct. 2013.

15.
X. Zhang, C. Yao., X. Lu, E. Davidson, M. Sievers, M. J. Scott, P. Xu, and J. Wang, "A GaN Transistor based 90W AC/DC Adapter with a Buck-PFC Stage and an Isolated Quasi-Switched-Capacitor DC/DC Stage," Applied Power Electronics Conference and Exposition(APEC), pp. 109-116, Mar. 2014.

16.
J. H. Lee, J. H. Park, and H. Jeon, “Series-connected forward-flyback converter for high step-up power conversion,” IEEE Trans. Power Electron., Vol. 26, No. 12, pp. 3629-3641, Dec. 2011. crossref(new window)

17.
W. Li, P. Li, H. Yang, and X. He, “Three-level forward–flyback phase-shift zvs converter with integrated series-connected coupled inductors,” IEEE Trans. Power Electron., Vol. 27, No. 6, pp. 2846-2856, Jun. 2012. crossref(new window)

18.
D.-H. Kim, J.-H. Jang, J.-H. Park, and J.-W. Kim, “Single-ended high-efficiency step-up converter using the isolated switched-capacitor cell,” Journal of Power Electronics, Vol. 13, No. 5, pp.766-778, 2013. crossref(new window)

19.
J.-M. Kwon, E.-H. Kim, B.-H. Kwon, K.-H. Nam, “High-efficiency fuel cell power conditioning system with input current ripple reduction,” IEEE Trans. Ind. Electron., Vol. 56, No. 3, pp. 826-834, Mar. 2009. crossref(new window)