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Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System
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  • Journal title : Journal of Power Electronics
  • Volume 16, Issue 2,  2016, pp.786-797
  • Publisher : The Korean Institute of Power Electronics
  • DOI : 10.6113/JPE.2016.16.2.786
 Title & Authors
Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System
Hou, Zhe; Li, Hongjie; Li, Jing; Ji, Shengchang; Huang, Chenxi;
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 Abstract
This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.
 Keywords
Damped oscillating voltage testing system;Flyback converter;High voltage switch;Insulated gate bipolar transistor (IGBT);Series connection;
 Language
English
 Cited by
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