Advanced SearchSearch Tips
An Estimation Method for the Efficiency of Light-Emitting Diode (LED) Devices
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
  • Journal title : Journal of Power Electronics
  • Volume 16, Issue 2,  2016, pp.815-822
  • Publisher : The Korean Institute of Power Electronics
  • DOI : 10.6113/JPE.2016.16.2.815
 Title & Authors
An Estimation Method for the Efficiency of Light-Emitting Diode (LED) Devices
Tao, Xuehui; Yang, Bin;
  PDF(new window)
The efficiency of light-emitting diode (LED) devices is a significant factor that reflects the capability of these devices to convert electrical power into optical power. In this study, a method for estimating the efficiency of LED devices is proposed. An efficiency model and a heat power model are established as convenient tools for LED performance evaluation. Such models can aid in the design of LED drivers and in the reliability evaluation of LED devices. The proposed estimation method for the efficiency and heat power of LED devices is verified by experimentally testing two types of commercial LED devices.
Efficiency;Heat power;Junction temperature;Light-emitting diode;
 Cited by
U.S. Department of Energy, Energy Efficiency and Renewable Energy, Thermal management of white LEDs,

J. C. W. Lam and P. K. Jain, “A high power factor, electrolytic capacitor-less ac-input LED driver topology with high frequency pulsating output current,” IEEE Trans. Power Electron., Vol. 30, No. 2, pp. 943-955, Feb. 2015 crossref(new window)

S. Y. R. Hui and Y. X. Qin, “A general photo-electro-thermal theory for light-emitting-diode (LED) systems,” IEEE Trans. Power Electron., Vol. 24, No. 8, pp. 1967-1976, Aug. 2009. crossref(new window)

X. H. Tao and S. Y. R. Hui, “Dynamic photo-electro-thermal theory for light-emitting diode systems,” IEEE Trans. Ind. Electron., Vol. 59, No. 4, pp. 1751-1759, Apr. 2012. crossref(new window)

Y. Xi, J. Q. Xi, T. Gessmann, J. M. Shah, J. K. Kim, E. F. Schubert, and A. A. Allerman, “Junction and carrier temperature measurements in deep-ultraviolet light emitting diodes using three different methods,” Appl. Phys. Lett., Vol. 86, No. 3, pp. 1907-1909, Jan. 2005. crossref(new window)

H. T. Chen, S. C. Tan, and S. Y. R. Hui, “Color variation reduction of GaN-based white light-emitting diodes via peak-wavelength stabilization,” IEEE Trans.Power Electron., Vol. 29, No. 7, pp. 3709-3719, Jul. 2014.

H. T. Chen, D. Y. Lin, S. C. Tan, and S. Y. R. Hui, “Chromatic, photometric and thermal modeling of LED systems with nonidentical LED devices,” IEEE Trans. Power Electron., Vol. 29, No. 12, pp. 6636-6647, Dec. 2014. crossref(new window)

C. W. Tang, B. J. Huang, and S. P. Ying, “Illumination and color control in red-green-blue light-emitting diode,” IEEE Trans. Power Electron., Vol. 29, No. 9, pp. 4921-4937, Sep. 2014. crossref(new window)

H. T. Chen, S. C. Tan, and S. Y. Hui, “Analysis and modeling of high-power phosphor-coated white light-emitting diodes with a large surface area,” IEEE Trans. Power Electron., Vol. 30, No. 6, pp. 3334-3344, Jun. 2015. crossref(new window)

H. Y. Ye, X. P. Chen, and G. Q. Zhang, “Thermal transient effect and improved junction temperature measurement method in high-voltage light-emitting diodes,” IEEE Electron Device Lett., Vol. 34, No. 9, pp. 1172-1174, Sep. 2013. crossref(new window)

A. Keppens, W. R. Ryckaert, G. Deconinck, and P. Hanselaer, “High power light-emitting diode junction temperature determination from current–voltage characteristics,” J. Appl. Phys., Vol. 104, No. 9, pp. 3104-3108, Nov. 2008. crossref(new window)

O. Heikkilä, J. Oksanen, and J. Tulkki, “Ultimate limit and temperature dependency of light-emitting diode efficiency,” J. Appl. Phys., Vol. 105, pp. 3119-3119, May 2009. crossref(new window)

O. Heikkilä, J. Oksanen, and J. Tulkki, “The challenge of unity wall plug efficiency: The effects of internal heating on the efficiency of light emitting diodes,” J. Appl. Phys., Vol. 107, No. 3, pp. 3105-3106, Feb. 2010. crossref(new window)

C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron. Device Lett., Vol. 32, No. 8, pp. 1098-1100, Aug. 2011. crossref(new window)

J. Piprek, “Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel junction-cascaded active regions,” Appl. Phys. Lett., Vol. 104, pp. 051118, Feb. 2014. crossref(new window)

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett., Vol. 91, No. 14, pp. 141101, Oct. 2007. crossref(new window)

K. A. Bulashevich and S. Y. Karpov, “Is auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?” Phys. Stat. Sol. (C), Vol. 5, No. 6, pp. 2066–2069, 2008. crossref(new window)

K. J. Vampola, M. Iza, S. Keller, S. P. D. Baars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett., Vol. 94, No. 6, pp. 061116, Feb. 2009. crossref(new window)

B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett., Vol. 91, No. 18, pp. 181103, Oct. 2007. crossref(new window)

J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Stat. Sol. (A), Vol. 207, No. 10, pp. 2217–2225, 2010 crossref(new window)

X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, U. Ozgur, H. Morkoc, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, “InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes,” Appl. Phys. Lett., Vol. 97, No. 3, pp. 031110, Jul. 2010. crossref(new window)

A. Poppe, G. Farkas, V. Sz´ekely, G. Horv´ath, and M. Rencz, "Multidomain simulation and measurement of power LED-s and power LED assemblies," in Proc. 22nd Annu. IEEE Semicond. Thermal Meas. Manag. Symp., pp. 191-198, 2006.

CREE X Lamp XR-E LED, Datasheet,

SEOUL N42180 LED, Datasheet,

G. Farkas, Q. V. V. Vader, A. Poppe, and G. Bogn´ar, “Thermal investigation of high power optical devices by transient testing,” IEEE Trans. Compon., Packag., Technol., Vol. 28, No. 1, pp. 45-50, Mar. 2005. crossref(new window)

V. Sz´ekely, A. Poppe, M. Rencz, M. Rosental, and T. Tesz´eri, “Therman: A thermal simulation tool for IC chips, microstructures and PW boards,” Microelectron. Rel., Vol. 40, No. 3, pp. 517-524, 2000. crossref(new window)