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Large-Signal Output Equivalent Circuit Modeling for RF MOSFET IC Simulation
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 Title & Authors
Large-Signal Output Equivalent Circuit Modeling for RF MOSFET IC Simulation
Hong, Seoyoung; Lee, Seonghearn;
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An accurate large-signal BSIM4 macro model including new empirical bias-dependent equations of the drain-source capacitance and channel resistance constructed from bias-dependent data extracted from S-parameters of RF MOSFETs is developed to reduce -parameter error of a conventional BSIM4 model. Its accuracy is validated by finding the much better agreement up to 40 GHz between the measured and modeled -parameter than the conventional one in the wide bias range.
CMOS;MOSFET;RF;modeling;drain-source capacitance;channel resistance;SPICE;parameter extraction;BSIM;
 Cited by
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