Publisher : The Institute of Electronics Engineers of Korea
DOI : 10.5573/JSTS.2015.15.5.490
Title & Authors
Growth of AlN/GaN HEMT structure Using Indium-surfactant Kim, Jeong-Gil; Won, Chul-Ho; Kim, Do-Kywn; Jo, Young-Woo; Lee, Jun-Hyeok; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee;
We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to , which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of exhibited best Hall measurement results; such as sheet resistance of electron mobility of , and two-dimensional electron gas (2DEG) density of . The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.
P. Waltereit, et al, "GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability," Phys. Status Solidi A 206, No.6, pp.1215-1220, Mar., 2009.
Yi-Feng Wu, et al, "Very-High Power Density AlGaN/GaN HEMTs," IEEE Trans. Electron. Devices, Vol.48, No.3, pp.586-590, Mar., 2001.
Gregg H. Jessen, et al, "Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices," IEEE Trans. Electron. Devices, Vol.54, pp.2589-2597, Oct., 2007.
O. Breitschadel, et al, "Short-channel effects in AlGAN/GaN HEMTs," Mater. Sci. Eng., Vol.82, pp.238-240, May., 2001.
J. P. Ibbetson, et al, "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors," Appl. Phys. Lett., Vol.77, No.2, pp.250-252, Jul., 2000.
I. P. Smorchkova, et al, "AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy," J. Appl. Phys., Vol.90, No.10, pp.5196-5201, Nov., 2001.
C. Y. Chang, et al, "Development of enhancement mode AlN/GaN high electron mobility transistors," Appl. Phys. Lett., Vol.94, pp.263505-1-3, Jun., 2009.
A. Bairamis, et al, "Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer," Appl. Phys. Lett., Vol.105, pp.113508-1-5, Sep., 2014.
T. Zimmermann, "AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance," IEEE Electron Device Lett., Vol.29, No.7, pp.661-664, Jul., 2008.
S. Keller, et al, "Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition," Appl. Phys. Lett., Vol.79, No.21, pp.3449-3451, Nov., 2001.
K. Cheng, et al, "AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ $Si_3N_4$ passivation," J. Cryst. Growth, Vol.315, pp.204-207, Jan., 2011.
M. Boota, R. Rahmatalla, "Growth of GaN on lattice matched AlInN substrates," Master thesis, University of Linkoping, Mar., 2008.
A. Bairamis, et al, "Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer" Appl. Phys. Lett., Vol.105, No.11, pp.113508-1-5, Sep., 2014.
Kelson. D. Chabak, et al, "High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator," IEEE Electron Device Lett., Vol.32, No.12, pp.1677-1679, Dec., 2011.
Kelson. D. Chabak, et al, "205-GHz (Al, In)N/GaN HEMTs," IEEE Electron Device Lett., Vol.31, No.9, pp.957-959, Sep., 2010.
Tongde Huang, et al, "Low-Leakage-Current AlN/GaN MOSFETs Using $Al_2O_3$ for Increases 2DEG," IEEE Electron Device Lett., Vol.33, No.2, pp.212-214, Feb., 2012.