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Growth of AlN/GaN HEMT structure Using Indium-surfactant
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 Title & Authors
Growth of AlN/GaN HEMT structure Using Indium-surfactant
Kim, Jeong-Gil; Won, Chul-Ho; Kim, Do-Kywn; Jo, Young-Woo; Lee, Jun-Hyeok; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee;
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We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to , which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of exhibited best Hall measurement results; such as sheet resistance of electron mobility of , and two-dimensional electron gas (2DEG) density of . The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.
AlN/GaN heterostructure;indium surfactant;HEMT;hall measurement;
 Cited by
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