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Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors
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 Title & Authors
Frequency-dependent C-V Characteristic-based Extraction of Interface Trap Density in Normally-off Gate-recessed AlGaN/GaN Heterojunction Field-effect Transistors
Choi, Sungju; Kang, Youngjin; Kim, Jonghwa; Kim, Jungmok; Choi, Sung-Jin; Kim, Dong Myong; Cha, Ho-Young; Kim, Hyungtak; Kim, Dae Hwan;
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It is essential to acquire an accurate and simple technique for extracting the interface trap density () in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.
normally-off;gate-recessed;AlGaN/GaN HFETs;interface trap density;frequency-dependent C-V;
 Cited by
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