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Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors
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 Title & Authors
Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors
Kim, Jonghwa; Choi, Sungju; Jang, Jaeman; Jang, Jun Tae; Kim, Jungmok; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan;
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 Abstract
We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}
 Keywords
InZnO;thin-film transistors;positive bias stress;donor-state;hole trapping;self-heating;
 Language
English
 Cited by
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