JOURNAL BROWSE
Search
Advanced SearchSearch Tips
Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor
Jang, Young In; Seo, Jae Hwa; Yoon, Young Jun; Eun, Hye Rim; Kwon, Ra Hee; Lee, Jung-Hee; Kwon, Hyuck-In; Kang, In Man;
  PDF(new window)
 Abstract
This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width () and the height of GaN layer () are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.
 Keywords
AlGaN/GaN;recessed gate;fin-type field-effect transistor (FinFET);3-D TCAD;
 Language
English
 Cited by
 References
1.
A. Goswami, R.J. Trew, and G.L. Bilbro, "Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs," Solid-State Electronics, vol. 80, no. 1, pp. 23-27, Feb. 2013. crossref(new window)

2.
Han-Yin Liu, Wei-Chou Hsu, Ching-Sung Lee, Bo-Yi Chou, Yi-Bo Liao, and Meng-Hsueh Chiang, "Investigation of Temperature-Dependent Characteristics of AlGaN/GaN MOS-HEMT by Using Hydrogen Peroxide Oxidation Technique," IEEE Trans. Electron Devices, vol. 61, no. 8, pp. 2760-2766, Aug. 2014. crossref(new window)

3.
Young Chul Choi, Milan Pophristic, Ho-young Cha, Boris Peres, Michael G. Spencer, and Lester F.Eastman, "The Effect of an Fe-doped GaN Buffer on OFF-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 2926-2931, Dec. 2006. crossref(new window)

4.
Han-Yin Liu, Bo-Yi Chou, Wei-Chou Hsu, Ching-Sung Lee, Jinn-Kong Sheu, and Chiu-Sheng Ho, "Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique," IEEE Trans. Electron Devices, vol. 60, no. 1, pp. 213-220, Jan. 2013. crossref(new window)

5.
Maojun Wang, Ye Wang, Chuan Zhang, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao, Wengang Wu, Kevin J. Chen, and Bo Shen, "900 V/$1.6m{\Omega}{\cdot}cm^2$ Normally Off $Al_2O_3$/GaN MOSFET on Silicon Substrate," IEEE Trans. Electron Devices, vol. 61, no. 6, pp. 2035-2040, Jun. 2014. crossref(new window)

6.
Tomohiro Murata, Masahiro Hikita, Yutaka Hirose, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, and Daisuke Ueda, "Source Resistance Reduction of AlGaN-GaN HFETs with Novel Superlattice Cap Layer," IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1042-1047, Jun. 2005. crossref(new window)

7.
T. Mizutani, M. Ito, S. Kishimoto, and F. Nakamura, "AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation," IEEE Electron Device Lett., vol. 28, no. 7, pp. 549-551, Jul. 2007. crossref(new window)

8.
Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi, Kunio Tsuda, and Ichiro Omura, "Recessed-Gate Structure Approach Toward Normally Off High-Voltage AlGaN/GaN HEMT for Power Electronics Applications," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 356-362, Feb. 2006. crossref(new window)

9.
Hsien-Chin Chiu, Li-Yi Peng, Chih-Wei Yang, Hsiang-Chun Wang, Yue-Ming Hsin, and Jen-Inn Chyi, "Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor," IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 507-511, Feb. 2015. crossref(new window)

10.
Injun Hwang, Jongseob Kim, Hyuk Soon Choi, Jaewon Lee, Kyung Yeon Kim, Jong-Bong Park, Jae Cheol Lee, Jongbong Ha, Jaejoon Oh, Jaikwang Shin, and U-in Chung, "p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current," IEEE Electron Device Lett., vol. 34, no. 2, pp. 202-204, Feb. 2013. crossref(new window)

11.
Ki-Won Kim, Sung-Dal Jung, Dong-Seok Kim, Hee-Sung Kang, Ki-Sik Im, Jae-Joon Oh, Jong-Bong Ha, Jai-Kwang Shin, and Jung-Hee Lee, "Effects of TMAH Treatment on Device Performance of Normally Off $Al_2O_3$/GaN MOSFET," IEEE Electron Device Lett., vol. 32, no. 10, pp. 1376-1378, Oct. 2011. crossref(new window)

12.
Jae-Hoon Lee, Chanho Park, Ki-Won Kim, Dong-Seok Kim, and Jung-Hee Lee, "Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate," IEEE Electron Device Lett., vol. 34, no. 8, pp. 975-977, Aug. 2013. crossref(new window)

13.
Z. H. Feng, R. Zhou, S.Y. Xie, J.Y. Yin, J. X. Fang, B. Liu, W. Zhou, Kevin J. Chen, and S. J. Cai, "18-GHz 3.65-W/mm Enhancement-Mode AlGaN/GaN HFET Using Fluorine Plasma Ion Implantation," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1386-1388, Dec. 2010. crossref(new window)

14.
Zhikai Tang, Qimeng Jiang, Yunyou Lu, Sen Huang, Shu Yang, Xi Tang, and Kevin J. Chen, "600-V Normally Off SiNx/AlGaN/GaN MISHEMT With Large Gate Swing and Low Current Collapse," IEEE Electron Device Lett., vol. 34, no. 11, pp. 1373-1375, Nov. 2013. crossref(new window)

15.
Ki-Sik Im, Chul-Ho Won, Young-Woo Jo, Jae-Hoon Lee, Maryline Bawedin, Sorin Cristoloveanu, and Jung-Hee Lee "High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3012-3018, Oct. 2013. crossref(new window)

16.
Shinya Takashima, Zhongda Li, and T. Paul Chow, "Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs," IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3025-3031, Oct. 2013. crossref(new window)

17.
Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Gwan Min Yoo, Young Jae Kim, Hye Rim Eun, Hye Su, Kang Jungjoon Kim, Seongjae Cho, Jung-Hee Lee, and In Man Kang, "Design and Analysis of Sub-10 nm Junctionless Fin-shaped Field-Effect Transistors," J. Semicond. Technol. Sci., vol. 13, no. 5, pp. 508-517, Oct. 2014.

18.
SILVACO International, ATLAS User's Manual, Nov. 2014

19.
Process Integration, Devices, and Structures (PIDS) Chapter, International Technology Roadmap for Semiconductors (ITRS), 2013 Edition.