Accurate RF C-V Method to Extract Effective Channel Length and Parasitic Capacitance of Deep-Submicron LDD MOSFETs

Title & Authors
Accurate RF C-V Method to Extract Effective Channel Length and Parasitic Capacitance of Deep-Submicron LDD MOSFETs
Lee, Sangjun; Lee, Seonghearn;

Abstract
A new paired gate-source voltage RF capacitance-voltage (C-V) method of extracting the effective channel length and parasitic capacitance using the intersection between two closely spaced linear regression lines of the gate capacitance versus gate length measured from S-parameters is proposed to remove errors from conventional C-V methods. Physically verified results are obtained at the gate-source voltage range where the slope of the gate capacitance versus gate-source voltage is maximized in the inversion region. The accuracy of this method is demonstrated by finding extracted value corresponding to the metallurgical channel length.
Keywords
MOSFET;CMOS;parameter extraction;effective channel length;parasitic capacitance;modeling;RF C-V;S-parameter;
Language
English
Cited by
1.
Si CMOS Extension and Ge Technology Perspectives Forecast Through Metal-oxide-semiconductor Junctionless Field-effect Transistor, JSTS:Journal of Semiconductor Technology and Science, 2016, 16, 6, 847
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