Publisher : The Institute of Electronics Engineers of Korea
DOI : 10.5573/JSTS.2015.15.6.658
Title & Authors
Integrate-and-Fire Neuron Circuit and Synaptic Device using Floating Body MOSFET with Spike Timing-Dependent Plasticity Kwon, Min-Woo; Kim, Hyungjin; Park, Jungjin; Park, Byung-Gook;
In the previous work, we have proposed an integrate-and-fire neuron circuit and synaptic device based on the floating body MOSFET [1-3]. Integrate-and-Fire(I&F) neuron circuit emulates the biological neuron characteristics such as integration, threshold triggering, output generation, refractory period using floating body MOSFET. The synaptic device has short-term and long-term memory in a single silicon device. In this paper, we connect the neuron circuit and the synaptic device using current mirror circuit for summation of post synaptic pulses. We emulate spike-timing-dependent-plasticity (STDP) characteristics of the synapse using feedback voltage without controller or clock. Using memory device in the logic circuit, we can emulate biological synapse and neuron with a small number of devices.
Integrate-and-fire neuron circuit;synaptic transistor;spike-timing-dependent-plasticity;long and short-term memory;floating body MOSFET;