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Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory
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 Title & Authors
Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory
Choi, Jun-Tae; Kil, Gyu-Hyun; Kim, Kyu-Beom; Song, Yun-Heub;
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 Abstract
A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard CMOS process. The proposed self-reference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology.
 Keywords
Magneto-resistive Random Access Memory;MRAM;self-reference;sense amplifier;operation speed;sense margin;
 Language
English
 Cited by
 References
1.
S. Yuasa, et al, "Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junction," Nature materials, 2010, Vol 3, pp. 868-871, Dec. 2010.

2.
Y. Lu, et at., "Bias voltage and temperature dependence of magnetotunneling effect," Journal of Applied Physics, Vol. 83, No. 11, pp. 6515-6517, Jun. 1998. crossref(new window)

3.
G. Y. Jeong, et al, "A 0.24-${\mu}m $2.0-V 1T1MTJ 15-kb Non-volatile Magnetoresistance RAM With Self-Reference Sensing Scheme," IEEE Journal of Solid-State Circuits, Vol. 38, No. 11, pp. 1906-1910, Nov., 2003. crossref(new window)

4.
H. Tanizaki, et al, "A high-density and high-speed 1T-4MTJ MRAM with Voltage Offset Self-Reference Sensing Scheme," Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian, 13-15, pp. 303-306, Nov., 2006.

5.
Y. Chen, et al, "Combined Magnetic- and Circuitlevel Enhancements for the Nondestructive Self-Reference Scheme of STT-RAM," Symposium on Low Power Electronics and Design, ISLPED 2010, IEEE International, pp. 1-6, Aug., 2010

6.
H. Zhao, et al, "Low writing energy and sub nanosecond spin torque transfer switching of inplane magnetic tunnel junction for spin torque transfer random access memory", Journal of Applied Physics, 2011, Vol. 109, No. 7, 07C720, pp.1-3, Apr., 2011

7.
Z. Diao, et al, "Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory," Journal of Physics: Condensed Matter, 2007, Vol. 19, No. 16, 165209, pp. 1-13, Apr., 2007

8.
S. Ikeda, et al, "A Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction," Nature materials, 2010, Vol. 9, pp. 721-724, Sep., 2010. crossref(new window)