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Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs
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 Title & Authors
Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs
SEOK, Ki Hwan; Kim, Hyung Yoon; Park, Jae Hyo; Lee, Sol Kyu; Lee, Yong Hee; Joo, Seung Ki;
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Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.
Polycrystalline silicon (Poly-Si);nickel silicide;metal induced lateral crystallization (MILC);edge cut (EC);
 Cited by
M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, "Polysilicon TFT technology for active matrix OLED displays," IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 845-851, May, 2001. crossref(new window)

D. J. Park, and B. O. Park, "High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Flexible Metal Foil Substrate," Japanese Journal of Applied Physics, vol. 49, no. 5, May, 2010.

K. Yamamoto, M. Yoshimi, Y. Tawada, Y. Okamoto, A. Nakajima, and S. Igari, "Thin-film poly-Si solar cells on glass substrate fabricated at low temperature," Applied Physics a-Materials Science & Processing, vol. 69, no. 2, pp. 179-185, Aug, 1999. crossref(new window)

T. J. King, and K. C. Saraswat, "Low-Temperature (Less-Than-or-Equal-to 550-Degrees-C) Fabrication of Poly-Si Thin-Film Transistors," IEEE Electron Device Letters, vol. 13, no. 6, pp. 309-311, Jun, 1992. crossref(new window)

H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, H. Kawata, M. Osumi, S. Tsuda, S. Nakano, and Y. Kuwano, "Enlargement of Poly-Si Film Grain-Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin-Film Transistor," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 30, no. 12B, pp. 3700-3703, Dec, 1991. crossref(new window)

M. Miyasaka, and J. Stoemenos, "Excimer laser annealing of amorphous and solid-phase-crystallized silicon films," Journal of Applied Physics, vol. 86, no. 10, pp. 5556-5565, Nov 15, 1999. crossref(new window)

S. W. Lee, and S. K. Joo, "Low temperature poly- Si thin-film transistor fabrication by metal-induced lateral crystallization," IEEE Electron Device Letters, vol. 17, no. 4, pp. 160-162, Apr, 1996. crossref(new window)

F. Oki, Y. Ogawa, and Y. Fujiki, "Effect of Deposited Metals on Crystallization Temperature of Amorphous Germanium Film," Japanese Journal of Applied Physics, vol. 8, no. 8, pp. 1056-&, 1969. crossref(new window)

W. J. wang, I. S. Kang, J. M. Yang, C. W. Ahn, H. S. Seo, G. H. Kim, and S. K. Hong, "Dynamic Characteristics of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits Fabricated with Asymmetric Precrystallization," Applied Physics, vol. 48, no. 2, Feb, 2009.

N. K. Song, Y. S. Kim, M. S. Kim, S. H. Han, and S. K. Joo, "A fabrication method for reduction of silicide contamination in polycrystalline-silicon thin-film transistors," Electrochemical and Solid State Letters, vol. 10, no. 5, pp. H142-H144, 2007. crossref(new window)

C. M. Hu, Y. C. S. Wu, and C. C. Lin, "Improving the electrical properties of NILC poly-Si films using a gettering substrate," IEEE Electron Device Letters, vol. 28, no. 11, pp. 1000-1003, Nov, 2007. crossref(new window)

J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, "Conductivity Behavior in Polycrystalline Semiconductor Thin-Film Transistors," Journal of Applied Physics, vol. 53, no. 2, pp. 1193-1202, 1982. crossref(new window)

R. E. Proano, R. S. Misage, and D. G. Ast, "Development and Electrical-Properties of Undoped Polycrystalline Silicon Thin-Film Transistors," IEEE Transactions on Electron Devices, vol. 36, no. 9, pp. 1915-1922, Sep, 1989. crossref(new window)