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Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors
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 Title & Authors
Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors
Song, Chang-Woo; Kim, Kyung-Hyun; Yang, Ji-Woong; Kim, Dae-Hwan; Choi, Yong-Jin; Hong, Chan-Hwa; Shin, Jae-Heon; Kwon, Hyuck-In; Song, Sang-Hun; Cheong, Woo-Seok;
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We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.
Mg suppression layer;a-ITZO TFT;electrical performances and stabilities;oxygen vacancy;
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