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Analysis on Self-Heating Effect in 7 nm Node Bulk FinFET Device
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 Title & Authors
Analysis on Self-Heating Effect in 7 nm Node Bulk FinFET Device
Yoo, Sung-Won; Kim, Hyunsuk; Kang, Myounggon; Shin, Hyungcheol;
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 Abstract
The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.
 Keywords
Bulk FinFET;self-heating effect;thermal conductivity ;lattice temperature;
 Language
English
 Cited by
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