JOURNAL BROWSE
Search
Advanced SearchSearch Tips
A Study on Contact Resistance Reduction in Ni Germanide/Ge using Sb Interlayer
facebook(new window)  Pirnt(new window) E-mail(new window) Excel Download
 Title & Authors
A Study on Contact Resistance Reduction in Ni Germanide/Ge using Sb Interlayer
Kim, Jeyoung; Li, Meng; Lee, Ga-Won; Oh, Jungwoo; Lee, Hi-Deok;
  PDF(new window)
 Abstract
In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.
 Keywords
Germanium;Schottky diode;low contact resistance;Ge MOSFET;
 Language
English
 Cited by
 References
1.
C. Claeyes et al, Germanium-Based Technology: From Materials to Devices, Elsevier, 2007.

2.
M. Koike et al, "Diffusion and activation of n-type dopants in germanium," J. Appl. Phys., Vol. 104, pp. 023523-1-5, 2008. crossref(new window)

3.
A. Dimoulas et al, "Fermi-level pinning and charge neutrality level in germanium," Appl. Phys. Lett., Vol. 89, pp. 052110-1-5, 2006. crossref(new window)

4.
P. Tsipas et al, "Modeling of negatively charged states at the Ge surface and interfaces," Appl. Phys. Lett., Vol. 94, pp. 012114-1-5, 2009. crossref(new window)

5.
M. Li et al, "Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology," J. Semicond. Technol. Sci., Vol. 13, No. 3, pp. 252-258, 2013. crossref(new window)

6.
H. S. Shin et al, "Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure," Jpn. J. Appl. Phys., Vol. 51, pp. 02BA02-1-3, 2012. crossref(new window)

7.
S. D. Kim et al, "Advanced Model and Analysis of Series Resistance for CMOS Scaling In to Nanometer Regime - Part II: Quantitative analysis," IEEE Transactions on Electron Devices, Vol. 49, No. 3, pp. 467 - 472. 2002. crossref(new window)

8.
J. A. Kittl et al, "Self-aligned Ti and Co silicides for high performance sub-0.18um CMOS technology," Thin Solids Films, Vol. 320, pp. 110-121, 1998. crossref(new window)

9.
S. D. Kim et al, "Advanced Model and Analysis of Series Resistance for CMOS Scaling Into Nanometer Regime-Part I: Theoretical Derivation," IEEE Transactions on Electron Devices, Vol. 49, No. 3, pp. 457-466. 2002. crossref(new window)

10.
R. K. Mishra et al, "Nickel germanide with rare earth interlayers for Ge CMOS applications," 2013 IEEE international Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, , 2013, p. 1-2.

11.
K. Scheroder, SEMICONDUCTOR MATERIAL AND DEVICE CHARACTERIZATION, Wiley-Interscience, 2006.

12.
M.Shayesteh et al, "NiGe contacts and Junction Architectures for P and As Doped Germanium Devices,", IEEE Transactions on Electron Devices, Vol. 58, No. 11, pp. 3801 - 3807, Nov, 2011. crossref(new window)