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Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor
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 Title & Authors
Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor
Park, Sung-Hoon; Lee, Jae-Gil; Cho, Chun-Hyung; Choi, Yearn-Ik; Kim, Hyungtak; Cha, Ho-Young;
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Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.
AlGaN/GaN;embedment;heterojunction field-effect transistor;monolithic integration;Schottky barrier diode;
 Cited by
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